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FDR8508P

Fairchild Semiconductor
Part Number FDR8508P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDR8508P March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5...
Datasheet PDF File FDR8508P PDF File

FDR8508P
FDR8508P

Overview
FDR8508P March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Features • -3.
0 A, -30 V.
• • • • RDS(ON) = 0.
052Ω @ VGS = -10V RDS(ON) = 0.
086Ω @ VGS = -4.
5V.
Low gate charge.
(8nC typical).
High performance trench technology for extremely low RDS(ON) High power and current handling capability.
Applications • Load switch • DC/DC converter • Motor driving D2 Small footprint (38% smaller than a standard SO-8);     low profile package (1 mm thick); power handling     capability similar to SO-8.
D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT-8 pin #1 G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power D...


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