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FDS3601

Fairchild Semiconductor
Part Number FDS3601
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description These N-Channel MOSFETs have b...
Datasheet PDF File FDS3601 PDF File

FDS3601
FDS3601

Overview
FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 1.
3 A, 100 V.
RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (3.
7nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise no...


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