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FDS6576

Fairchild Semiconductor
Part Number FDS6576
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench“ M...
Datasheet PDF File FDS6576 PDF File

FDS6576
FDS6576

Overview
FDS6576 P-Channel 2.
5V Specified PowerTrench“ MOSFET December 2006 tm FDS6576 P-Channel 2.
5V Specified PowerTrench“ MOSFET General Description Features This P-Channel 2.
5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V - 12V).
Applications • Load switch • Battery protection • Power management  –11 A, –20 V.
RDS(ON) = 0.
014 : @ VGS = –4.
5 V  RDS(ON) = 0.
020 : @ VGS = –2.
5 V r • Extended VGSS range ( 12V) for battery applications.
• Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.
• RoHS Compliant.
D D D D G SO-8 SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) RTJC Thermal Resistance, Junction-to-Case (Note 1) Package Marking and Ordering Information Device Marking FDS6576 Device FDS6576 Reel Size 13’’ 5 6 7 8 Ratings –20 r 12 –11 –50 2.
5 1.
2 1.
0 –55 to +150 50 125 25 Tape width 12mm 4 3 2 1 Units V V A W qC qC/W qC/W qC/W Quantity 2500 units ”2006 Fairchild Semiconductor Corporation FDS6576 Rev E3 FDS6576 P-Channel 2.
5V Specified PowerTrench“ MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward IGSSR Gate–Bod...


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