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FDS6644

Fairchild Semiconductor
Part Number FDS6644
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS6644 September 2001 FDS6644 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been de...
Datasheet PDF File FDS6644 PDF File

FDS6644
FDS6644

Overview
FDS6644 September 2001 FDS6644 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features • 13 A, 30 V.
RDS(ON) = 8.
5 mΩ @ VGS = 10 V RDS(ON) = 10.
5 mΩ @ VGS = 4.
5 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (25 nC typical) • High power and current handling capability Applications • DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25 C unless otherwise noted o 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±16 (Note 1a) Units V V A W 13 52 2.
5 1.
4 1.
2 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS6644 Device FDS6644 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2001 Fairchild Semiconductor Corporation FDS6644 Rev A (W) FDS6644 PRELIMI NARY 4/FDU664 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µ A ID = 250 µ A, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = –16 V, VDS = 0 V VDS = VGS, ID = 250 µ A ID = 250 µ A, Referenced to 25°C VGS = 10 V, ID = 13 A VGS = 4.
5 V...


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