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FDS6875

Part Number	FDS6875
Manufacturer	Fairchild Semiconductor
Description	Dual P-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V speci...
Datasheet	FDS6875 PDF File

Overview

November 1998 FDS6875 Dual P-Channel 2.
5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Features -6 A, -20 V.
RDS(ON) = 0.
030 Ω @ VGS = -4.
5 V, RDS(ON) = 0.
040 Ω @ VGS = -2.
5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON).
High power and curren...

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