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FFB2907A

Fairchild Semiconductor
Part Number FFB2907A
Manufacturer Fairchild Semiconductor
Description PNP Multi-Chip General Purpose Amplifier
Published Mar 30, 2005
Detailed Description FFB2907A / FMBT2907A / MMPQ2907A Discrete POWER & Signal Technologies FFB2907A E2 B2 C1 FMB2907A C2 E1 C1 MMPQ2907A ...
Datasheet PDF File FFB2907A PDF File

FFB2907A
FFB2907A


Overview
FFB2907A / FMBT2907A / MMPQ2907A Discrete POWER & Signal Technologies FFB2907A E2 B2 C1 FMB2907A C2 E1 C1 MMPQ2907A E2 B2 E3 B3 E4 B4 E1 C2 B1 pin #1 B1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .
2F SuperSOT™-6 Mark: .
2F SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
Sourced from Process 63.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 60 60 5.
0 600 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.
4 415 Max FMB2907A 700 5.
6 180 MMPQ2907A 1,000 8.
0 125 240 Units mW mW/°C °C/W °C/W °C/W © 1998 Fairchild Semiconductor Corporation FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 30 V, VEB = 0.
5 V VCE = 30 V, VBE = 0.
5 V VCB = 50 V, IE = 0 VCB = 50 V, IE =...


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