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F2002

Polyfet RF Devices
Part Number F2002
Manufacturer Polyfet RF Devices
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet PDF File F2002 PDF File

F2002
F2002

Overview
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 30 Watts Junction to Case Thermal Resistance 6 o C/W Maximum Junction Temperatu...


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