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F2003

Polyfet RF Devices
Part Number F2003
Manufacturer Polyfet RF Devices
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet PDF File F2003 PDF File

F2003
F2003


Overview
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 30 Watts Junction to Case Thermal Resistance 6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 1.
6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP 5WATTS OUTPUT ) MAX...



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