DatasheetsPDF.com
M28F512
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
Description
M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES 32 1 PDIP32 (B) PLCC32 (C) D...
STMicroelectronics
Download M28F512 Datasheet
Similar Datasheet
M28F512
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
- STMicroelectronics
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)