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FP4050

Part Number	FP4050
Manufacturer	Filtronic Compound Semiconductors
Description	2-WATT POWER PHEMT
Published	Apr 1, 2005
Detailed Description	PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT • FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Pow...
Datasheet	FP4050 PDF File

Overview

PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT • FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
50 um by 400 um Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitter...

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