DatasheetsPDF.com

FQA18N50V2

Fairchild Semiconductor
Part Number FQA18N50V2
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQA18N50V2 QFET FQA18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec...
Datasheet PDF File FQA18N50V2 PDF File

FQA18N50V2
FQA18N50V2

Overview
FQA18N50V2 QFET FQA18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TM Features • • • • • • 20A, 500V, RDS(on) = 0.
265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-3P G DS FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)