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FQA58N08

Part Number	FQA58N08
Manufacturer	Fairchild Semiconductor
Description	80V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQA58N08 December 2000 QFET FQA58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet	FQA58N08 PDF File

Overview

FQA58N08 December 2000 QFET FQA58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
TM Features • • • • • • • 64A, 80V, RDS(on) = 0.
024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Cont...

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FQA58N08 80V N-Channel MOSFET - Fairchild Semiconductor

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