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FQB19N20

Fairchild Semiconductor
Part Number FQB19N20
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB19N20 — N-Channel QFET® MOSFET FQB19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ November 2013 Description Thi...
Datasheet PDF File FQB19N20 PDF File

FQB19N20
FQB19N20

Overview
FQB19N20 — N-Channel QFET® MOSFET FQB19N20 N-Channel QFET® MOSFET 200 V, 19.
4 A, 150 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 19.
4 A, 200 V, RDS(on) = 150 mΩ (Max.
) @ VGS = 10 V, ID = 9.
7 A • Low Gate Charge (Typ.
31 nC) • Low Crss (Typ.
30 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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