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FQB33N10

Fairchild Semiconductor
Part Number FQB33N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB33N10 / FQI33N10 April 2000 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description These N-Channel enha...
Datasheet PDF File FQB33N10 PDF File

FQB33N10
FQB33N10


Overview
FQB33N10 / FQI33N10 April 2000 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
D TM Features • • • • • • • 33A, 100V, RDS(on) = 0.
052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching.
100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB33N10 / FQI33N10 100 33 23 132 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 435 33 12.
7 6.
0 3.
75 127 0.
85 -55 to +175 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
18 40 62.
5 Units °CW °CW °CW * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A, April 2000 FQB33N1...


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