DatasheetsPDF.com

FQB47P06

Fairchild Semiconductor
Part Number FQB47P06
Manufacturer Fairchild Semiconductor
Description 60V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB47P06 / FQI47P06 May 2001 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description These P-Channel enhance...
Datasheet PDF File FQB47P06 PDF File

FQB47P06
FQB47P06

Overview
FQB47P06 / FQI47P06 May 2001 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
TM Features • • • • • • • -47A, -60V, RDS(on) = 0.
026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR E...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)