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FQB7P06

Fairchild Semiconductor
Part Number FQB7P06
Manufacturer Fairchild Semiconductor
Description 60V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB7P06 / FQI7P06 May 2001 QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description These P-Channel enhancement...
Datasheet PDF File FQB7P06 PDF File

FQB7P06
FQB7P06

Overview
FQB7P06 / FQI7P06 May 2001 QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
TM Features • • • • • • • -7A, -60V, RDS(on) = 0.
41Ω @VGS = -10 V Low gate charge ( typical 6.
3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB7P06 / FQI7P06 -60 -7.
0 -4.
95 -28 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 90 -7.
0 4.
5 -7.
0 3.
75 45 0.
3 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.
35 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corpora...


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