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FQB9P25

Fairchild Semiconductor
Part Number FQB9P25
Manufacturer Fairchild Semiconductor
Description 250V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB9P25 — P-Channel QFET® MOSFET FQB9P25 P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ November 2013 Description Thes...
Datasheet PDF File FQB9P25 PDF File

FQB9P25
FQB9P25

Overview
FQB9P25 — P-Channel QFET® MOSFET FQB9P25 P-Channel QFET® MOSFET -250 V, -9.
4 A, 620 mΩ November 2013 Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters.
Features • -9.
4 A, -250 V, RDS(on) = 620 mΩ (Max.
) @ VGS = -10 V, ID = -4.
7 A • Low Gate Charge (Typ.
29 nC) • Low Crss (Typ.
27 pF) • 100% Avalanche Tested G S D D2-PA...


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