DatasheetsPDF.com

FQD4P40

Fairchild Semiconductor
Part Number FQD4P40
Manufacturer Fairchild Semiconductor
Description 400V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD4P40 / FQU4P40 August 2000 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description These P-Channel enhance...
Datasheet PDF File FQD4P40 PDF File

FQD4P40
FQD4P40

Overview
FQD4P40 / FQU4P40 August 2000 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
TM Features • • • • • • -2.
7A, -400V, RDS(on) = 3.
1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)