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FQP90N10V2

Fairchild Semiconductor
Part Number FQP90N10V2
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancemen...
Datasheet PDF File FQP90N10V2 PDF File

FQP90N10V2
FQP90N10V2


Overview
FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
® Features • • • • • • 90 A, 100V, RDS(on) = 0.
01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25...



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