DatasheetsPDF.com

FQPF12N20L

Fairchild Semiconductor
Part Number FQPF12N20L
Manufacturer Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF12N20L February 2001 FQPF12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode p...
Datasheet PDF File FQPF12N20L PDF File

FQPF12N20L
FQPF12N20L

Overview
FQPF12N20L February 2001 FQPF12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
Features • • • • • • • 8.
2A, 200V, RDS(on) = 0.
28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF12N20L 200 8.
2 5.
2 32.
8 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 210 8.
2 4.
5 5.
5 45 0.
36 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 2.
78 62.
5 Units °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A1, February 2001 FQPF12N20L Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)