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FQPF33N10

Fairchild Semiconductor
Part Number FQPF33N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF33N10 April 2000 QFET FQPF33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File FQPF33N10 PDF File

FQPF33N10
FQPF33N10

Overview
FQPF33N10 April 2000 QFET FQPF33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM Features • • • • • • • 18A, 100V, RDS(on) = 0.
052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Volta...


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