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FQU2N90

Fairchild Semiconductor
Part Number FQU2N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω January 2014 ...
Datasheet PDF File FQU2N90 PDF File

FQU2N90
FQU2N90

Overview
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.
7 A, 7.
2 Ω January 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 1.
7 A, 900 V, RDS(on) = 7.
2 Ω (Max.
) @ VGS = 10 V, ID = 0.
85 A • Low Gate Charge (Typ.
12 nC) • Low Crss (Typ.
5.
5 pF...


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