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FQU30N06

Fairchild Semiconductor
Part Number FQU30N06
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel e...
Datasheet PDF File FQU30N06 PDF File

FQU30N06
FQU30N06

Overview
FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features • 22.
7A, 60V, RDS(on) = 0.
045Ω @ VGS = 10V • Low gate charge ( typical 19 nC) • Low Crss ( typical 40 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 150oC maximum junction temperature rating • RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds " !" G! " " ! S FQD30N06 / FQU30N06 60 22.
7 14.
3 90.
8 ± 25 280 22.
7 4.
4 7.
0 2.
5 44 0.
35 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Typ Max...


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