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FQU8N25

Part Number	FQU8N25
Manufacturer	Fairchild Semiconductor
Description	250V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQD8N25 / FQU8N25 May 2000 QFET FQD8N25 / FQU8N25 250V N-Channel MOSFET General Description These N-Channel enhancemen...
Datasheet	FQU8N25 PDF File

Overview

FQD8N25 / FQU8N25 May 2000 QFET FQD8N25 / FQU8N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
TM Features • • • • • • 6.
2A, 250V, RDS(on) = 0.
55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD8N25 / FQU8N25 250 6.
2 3.
9 24.
8 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 120 6.
2 5.
0 5.
5 2.
5 50 0.
4 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.
5 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A, May 2000 FQD8N25 / FQU8N25 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min ...

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FQU8N25 250V N-Channel MOSFET - Fairchild Semiconductor

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