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ED1502

NXP
Part Number ED1502
Manufacturer NXP
Description NPN general purpose transistor
Published Apr 1, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification S...
Datasheet PDF File ED1502 PDF File

ED1502
ED1502

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max.
25 mA) • Low voltage (max.
20 V) • High gain.
APPLICATIONS • General purpose switching and amplification.
1 handbook, halfpage ED1502 PINNING PIN 1 2 3 emitter base collector DESCRIPTION DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package.
2 3 3 2 1 MAM182 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Refer to TO-92; SOT54 standard mounting conditions.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
40 20 4 25 25 25 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to TO-92; SOT54 standard mounting conditions.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain ED1502B ED1502C ED1502D ED1502E VBE Cre fT Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
base-emitter voltage feedback capacitance transition frequency IC = 7 mA; VCE = 10 V; note 1 IC = ic = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz CONDITIONS IE = 0; VCB = 40 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 4 V IC = 7 mA; VCE = 10 V 48 66 84 105 − − 361 − − − − − 0.
5 − MIN.
− − − TYP.
− − − PARAMETER thermal resistance from junction to a...


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