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5GL2CZ47A

Part Number	5GL2CZ47A
Manufacturer	Toshiba Semiconductor
Description	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK
Published	Apr 1, 2005
Detailed Description	5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5G...
Datasheet	5GL2CZ47A PDF File

Overview

5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V, 400V z Average Output Rectified Current : IO = 5 A z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max) z Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT 5DL2CZ47A 200 Repetitive Peak Reverse Voltage 5FL2CZ47A VRRM 300 V 5GL2CZ47A 400 Average Output Rectified Current Peak One Cycle Surge Forward Current (Sin Wave) Junction Temperature Storage Temperature Range Screw Torque IO IFSM Tj Tstg ― 5 25 (50Hz) 27.
5 (60Hz) −40~150 −40~150 0.
6 A A °C °C N·m JEDEC JEITA TOSHIBA Weight: 2.
0 g ― ― 12−10C1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Peak Forward Voltage (Note 1) 5DL2CZ47A 5FL2CZ47A 5GL2CZ47A Repetitive Peak Reverse Current (Note 1) 5DL2CZ47A 5FL2CZ47A 5GL2CZ47A Reverse Recovery Time (Note 1) Forward Recovery Time (Note 1) Thermal Resistance VFM IRRM trr tfr Rth (j−c) Note 1: A value applied to one cell.
TEST CONDITION IFM = 2.
5A VRRM = Rated IF = 2A, di / dt = −20A / μs IF = 1A Total DC, Junction to Case TYP.
― ― ― ― ― ― ― ― ― MAX UNIT 0.
98 1.
3 1.
8 10 10 50 35 100 3.
8 V μA ns ns °C / W POLARIT...

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5GL2CZ47A SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK - Toshiba Semiconductor

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