DatasheetsPDF.com

HY57V161610D

Part Number	HY57V161610D
Manufacturer	Hynix Semiconductor
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Published	Apr 2, 2005
Detailed Description	HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,...
Datasheet	HY57V161610D PDF File

Overview

HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range.
HY57V161610D is organized as 2banks of 524,288x16.
HY57V161610D is offering fully synchronous operation referenced to a positive edge clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 o...

Similar Datasheet

HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor
HY57V161610D-I 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor
HY57V161610E 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor
HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor
HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor
HY57V161610FT-5 16Mb Synchronous DRAM - Hynix Semiconductor
HY57V161610FT-5I 16Mb Synchronous DRAM - Hynix Semiconductor
HY57V161610FT-6 16Mb Synchronous DRAM - Hynix Semiconductor
HY57V161610FT-6I 16Mb Synchronous DRAM - Hynix Semiconductor
HY57V161610FT-7 16Mb Synchronous DRAM - Hynix Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)