1M x 16 Pseudo SRAM
Description
EtronTech
Features
Organized as 1M words by 16 bits Fast Cycle Time : 70ns Standby Current : 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm
EM566168
1M x 16 Pseudo SRAM
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