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2SD0601

Panasonic Semiconductor
Part Number 2SD0601
Manufacturer Panasonic Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 ...
Datasheet PDF File 2SD0601 PDF File

2SD0601
2SD0601

Overview
Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.
8 –0.
3 +0.
2 Unit: mm s Features q q q 0.
65±0.
15 +0.
25 1.
5 –0.
05 0.
65±0.
15 High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
(Ta=25˚C) Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.
95 2.
9 –0.
05 1 1.
9±0.
2 +0.
2 0.
95 3 0.
4 –0.
05 +0.
1 2 1.
45 1.
1 –0.
1 +0.
2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : Z s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Collector output capacitance *h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT NV Cob * Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.
1 0.
1 to 0.
3 0.
4±0.
2 0.
8 s Absolute Maximum Ratings max 0.
1 100 0.
16 –0.
06 +0.
1 Unit µA µA V V V 60 50 7 160 90 0.
1 150 110 3.
5 0.
3 460 V MHz mV pF FE1 Rank classification Rank hFE1 Q 160 ~ 260 ZQ R 210 ~ 340 ZR S 290 ~ 460 ZS Marking Symbol 1 Transistor PC — Ta 240 60 Ta=25˚C IB=160µA 200 50 1000 2SD601A IC — VCE 1200 VCE=10V Ta=25˚C IB — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 4...


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