Silicon NPN triple diffusion Transistor
Description
Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0.3 11.0±0.2
Unit: mm
5.0±0.2 3.2
s Features
q q q
16.2±0.5 12.5 3.5 Solder Dip
High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
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Panasonic Semiconductor
2SD1457 PDF File
Similar Datasheet