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2SD2440

Toshiba Semiconductor
Part Number 2SD2440
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application 2SD2440 Unit: mm · High breakdown vo...
Datasheet PDF File 2SD2440 PDF File

2SD2440
2SD2440

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application 2SD2440 Unit: mm · High breakdown voltage: VCBO = 100 V : VEBO = 18 V · Low saturation voltage: VCE (sat) = 1.
2 V (max) (IC = 5 A, IB = 1 A) · High speed: tf = 1 µs (typ.
) (IC = 5 A, IB = ±0.
5 A) · High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.
5 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 60 18 6 12 2 40 150 −55 to 150 Unit V V V A A ...


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