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6MBI25S-120L

Fuji Electric
Part Number 6MBI25S-120L
Manufacturer Fuji Electric
Description IGBT(1200V/6x25A)
Published Apr 3, 2005
Detailed Description 6MBI 25S-120L IGBT MODULE ( S-Series ) n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • Hi...
Datasheet PDF File 6MBI25S-120L PDF File

6MBI25S-120L
6MBI25S-120L

Overview
6MBI 25S-120L IGBT MODULE ( S-Series ) n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching 6-Pack IGBT 1200V 6x25A n Outline Drawing n Applications • High Power Switching • A.
C.
Motor Controls • D.
C.
Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current (25°C / 80°C) Max.
Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.
C.
1min.
Vis Mounting *1 ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=25mA VGE=15V IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=± 15V RG=51Ω IF=25A VGE=0V IF=25A Ratings 1200 ± 20 35 / 25 70 / 50 35 / 25 70 / 50 200 +150 -40 ∼ +125 2500 3.
5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.
5 ∼ 3.
5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Min.
Typ.
6.
0 2.
1 3300 Max.
1.
0 200 9.
0 Units mA µA V V pF 0.
60 0.
40 0.
45 0.
10 1.
2 0.
6 1.
0 0.
3 3.
3 350 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min.
Typ.
Max.
0.
62 1.
00 Units °C/W 0.
05 For more information, contact: Collmer Semiconductor, Inc.
P.
O.
Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.
collmer.
com ...


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