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KM416V4100B

Part Number	KM416V4100B
Manufacturer	Samsung semiconductor
Description	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Published	Apr 4, 2005
Detailed Description	KM416V4000B, KM416V4100B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,1...
Datasheet	KM416V4100B PDF File

Overview

KM416V4000B, KM416V4100B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high re...

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