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KM416V4100C

Samsung semiconductor
Part Number KM416V4100C
Manufacturer Samsung semiconductor
Description 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Published Apr 4, 2005
Detailed Description KM416V4000C, KM416V4100C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,1...
Datasheet PDF File KM416V4100C PDF File

KM416V4100C
KM416V4100C

Overview
KM416V4000C, KM416V4100C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES • Part Identification - KM416V4000C/C-L(3.
3V, 8K Ref.
) - KM416V4100C/C-L(3.
3V, 4K Ref.
) • Active Power Dissipation Unit : mW Speed -45 -5 -6 8K 324 288 252 4K 468 432 396 • Fast Page Mode operation • 2CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-...


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