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KSA709

Fairchild Semiconductor
Part Number KSA709
Manufacturer Fairchild Semiconductor
Description High Voltage Amplifier
Published Apr 5, 2005
Detailed Description KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800m...
Datasheet PDF File KSA709 PDF File

KSA709
KSA709

Overview
KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector (1.
Emitter 2.
Collector 3.
Base) TO-92 1 1.
Emitter 2.
Base 3.
Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -160 -150 -8 -700 800 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -100V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -200mA, IB= -20mA IC= -200mA, IB= -20mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz 70 -0.
3 -0.
9 50 10 Min.
-160 -150 -8 -0.
1 -0.
1 400 -0.
4 -1.
0 V V MHz pF Typ.
Max.
Units V V V µA µA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev.
B1, April 2004 KSA709 Typical Characteristics -100 1000 IB = -0.
8mA VCE = -5V IC[mA], COLLECTOR CURRENT IB = -0.
6mA -80 hFE, DC CURRENT GAIN IB = -0.
4mA -60 100 -40 10 IB = -0.
2mA -20 0 0 -2 -4 -6 -8 -10 1 -0.
1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -1000 IC = 10 IB VCE = -1V -1 VBE(sat) IC[mA], COLLECTOR CURRENT -100 ...


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