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KSB707

Fairchild Semiconductor
Part Number KSB707
Manufacturer Fairchild Semiconductor
Description Low Frequency Power Amplifier
Published Apr 5, 2005
Detailed Description KSB707/708 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1...
Datasheet PDF File KSB707 PDF File

KSB707
KSB707

Overview
KSB707/708 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1 TO-220 2.
Collector 3.
Emitter 1.
Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature : B707 : B708 Value - 80 - 60 - 80 - 7.
0 - 7.
0 - 15 - 3.
5 40 1.
5 150 - 55 ~ 150 Units V V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.
5A IC = - 5A, IB = - 0.
5A 40 20 Typ.
Max.
- 10 - 10 200 - 0.
5 - 1.
5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Cassification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev.
A, February 2000 KSB707/708 Typical Characteristics -1.
0 1000 IB = -20mA VCE = -1V IC[A], COLLECTOR CURRENT -0.
8 IB = -18mA IB = -16mA IB = -14mA hFE, DC CURRENT GAIN -50 100 -0.
6 IB = -12mA IB = -10mA -0.
4 IB = -8mA IB = -6mA 10 -0.
2 IB = -4mA IB = -2mA 0 -10 -20 -30 -40 1 -0.
001 -0.
01 -0.
1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE -10 IC = 10·I B 50 -10 IC[A], COLLECTOR CURRENT 10 10 Dis 0ms s Lim ipatio n ite d ms 10 30 0us 0u s us -1 1m VBE(sat) s -1 s/ b m Li d it e -0.
1 -0.
1 VCE(sat) -0.
01 -0.
001 -0.
01 -0.
01 ...


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