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KSB744A

Fairchild Semiconductor
Part Number KSB744A
Manufacturer Fairchild Semiconductor
Description Audio Frequency Power Amplifier
Published Apr 5, 2005
Detailed Description KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A 1 TO-126 2.Collector 3.Base 1...
Datasheet PDF File KSB744A PDF File

KSB744A
KSB744A

Overview
KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A 1 TO-126 2.
Collector 3.
Base 1.
Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : KSB744 : KSB744A Value -70 -45 -60 -5 -3 -5 -0.
6 1 10 150 -55 ~ 150 Units V V V V A A A W W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = -45V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -0.
5A IC = -1.
5A, IC = -0.
15A IC = -1.
5A, IB = -0.
15A VCE = -5V, IC = -0.
1A VCB = -10V, IE = 0 f = 1MHz 30 60 120 100 -0.
5 -0.
8 45 60 Min.
Typ.
Max.
-1 -1 320 -2 -2 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Cassification Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor International Rev.
A, February 2000 KSB744/744A Typical Characteristics -1.
6 -1000 VCE = -5V Ic[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN -40 -1.
2 IB = -20mA IB = -18mA IB = -16mA IB = -14mA IB = -12mA IB = -10mA IB = -8mA IB = -6mA IB = -4mA -100 -0.
8 -10 -0.
4 IB = -2mA 0 -10 -20 -30 -1 -0.
001 -0.
01 -0.
1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE -10 1000 IC = 10·I B IE = 0 f=1.
0MHz -1 Cob[pF], CAPACITANCE -0.
1 -1 -10 VBE(sat) 100 -0.
1 10 VCE(sat) ...


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