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KSE5742

Fairchild Semiconductor
Part Number KSE5742
Manufacturer Fairchild Semiconductor
Description NPN Silicon Darlington Transistor
Published Apr 5, 2005
Detailed Description KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power D...
Datasheet PDF File KSE5742 PDF File

KSE5742
KSE5742

Overview
KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control 1 TO-220 2.
Collector 3.
Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector-Emitter Voltage : KSE5740 : KSE5741 : KSE5742 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 1.
Base Value 300 350 400 600 700 800 8 8 16 2.
5 5 80 150 - 65 ~ 150 Units V V V V V V V A A A A W °C °C VCEV VEBO IC ICP IB IBP PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50mA, IB=0 Min.
300 350 400 1 75 50 200 100 400 2 3 2.
5 3.
5 2.
5 0.
04 0.
5 8 2 4 2 V V V V V µs µs µs µs µs µs Rev.
A1, June 2001 Typ.
Max.
Units V V V mA mA ICEV IEBO hFE VCE(sat) VBE(sat) VF tD tR tS tF tSV tC VCEV=Rate Value, VBE(OFF)=1.
5V VEB = 8V, IC= 0 VCE =5V, IC = 0.
5A VCE =5V, IC = 4A IC =4A, IB = 0.
2A IC =8A, IB= 0.
4A IC =4A, IB = 0.
2A IC =8A, IB = 0.
4A IF =5A VCC = 250V, IC(pk) = 6A IB1 = IB2 = 0.
25A tP = 25µs Duty Cycle≤1% IC(pk) = 6A, VCE(pk) = 250V IB1= 0.
06A, VBE (off) = 5V * PW=5ms, Duty Cycle=10% ©2001 Fairchild Semiconductor Corporation KSE5740/5741/5742 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 V CE = 5V IC = 20 IB hFE, DC CURRENT GAIN V BE(sat) 1 V CE(sat) 100 0.
1 10 0.
1 1 10 0.
01 0.
1 1 ...


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