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KST5551

Fairchild Semiconductor
Part Number KST5551
Manufacturer Fairchild Semiconductor
Description Amplifier Transistor
Published Apr 5, 2005
Detailed Description KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350...
Datasheet PDF File KST5551 PDF File

KST5551
KST5551

Overview
KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350mW 3 2 1 SOT-23 Mark: G1 1.
Base 2.
Emitter 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 600 350 150 -55 ~ 150 Units V V V mA mW °C °C • Refer to 2N5551 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Vo...


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