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ISL9N307AP3

Fairchild Semiconductor
Part Number ISL9N307AP3
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Published Apr 5, 2005
Detailed Description ISL9N307AP3/ISL9N307AS3ST January 2002 ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench ...
Datasheet PDF File ISL9N307AP3 PDF File

ISL9N307AP3
ISL9N307AP3

Overview
ISL9N307AP3/ISL9N307AS3ST January 2002 ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
006Ω (Typ), VGS = 10V • rDS(ON) = 0.
010Ω (Typ), VGS = 4.
5V • Qg (Typ) = 28nC, VGS = 5V • Qgd (Typ) = 10nC • CISS (Typ) = 3000pF DRAIN (FLANGE) SOURCE DRAIN GATE D Applications • DC/DC converters GATE SOURCE G DRAIN (FLANGE) S TO-263AB Symbol VDSS VGS TO-220AB Ratings 30 ±20 75 52 16 Figure 4 100 0.
67 -55 to 175 Units V V A A A A W W/oC oC MOSFET Maximum Ratings TA = 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC =...


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