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IXBH9N160G

IXYS Corporation
Part Number IXBH9N160G
Manufacturer IXYS Corporation
Description Monolithic Bipolar MOS Transistor
Published Apr 5, 2005
Detailed Description High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES...
Datasheet PDF File IXBH9N160G PDF File

IXBH9N160G
IXBH9N160G

Overview
High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat)  7.
0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 25°C, 1ms CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27 TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque Maximum Ratings 1600 1600 V V ±20 V ±30 V 9A 5A 10 A ICM = 12 1280 A V 100 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 1.
13/10 Nm...


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