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IXSX35N120BD1

IXYS Corporation
Part Number IXSX35N120BD1
Manufacturer IXYS Corporation
Description HIGH VOLTAGE IGBT WITH DIODE
Published Apr 5, 2005
Detailed Description High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ...
Datasheet PDF File IXSX35N120BD1 PDF File

IXSX35N120BD1
IXSX35N120BD1

Overview
High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.
6 mm (0.
063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive TC = 25°C IGBT Diode IXSK 35N120BD1 IXSX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.
6 V Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.
8 VCES 10 300 190 -55 .
.
.
+150 150 -55 .
.
.
+150 300 10 6 V V V V A A A A ms W W °C °C °C °C g g TO-264 AA (IXSK) G C TM E PLUS TO-247 (IXSX) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features • Hole-less TO-247 package for clip mounting • High frequency IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conductio...


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