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IMBD4148

General Semiconductor
Part Number IMBD4148
Manufacturer General Semiconductor
Description Small Signal Diodes
Published Apr 5, 2005
Detailed Description IMBD4148 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ Silicon Epitaxial Planar Diodes Top V...
Datasheet PDF File IMBD4148 PDF File

IMBD4148
IMBD4148

Overview
IMBD4148 Small Signal Diodes SOT-23 .
122 (3.
1) .
118 (3.
0) .
016 (0.
4) 3 FEATURES ♦ Silicon Epitaxial Planar Diodes Top View .
056 (1.
43) .
052 (1.
33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion.
including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type designation LL4148, and the SOD-123 case with the type designation 1N4148W 1 2 max.
.
004 (0.
1) ♦ This diode is also available in other case styles .
007 (0.
175) .
005 (0.
125) .
037(0.
95) .
037(0.
95) .
045 (1.
15) .
037 (0.
95) .
016 (0.
4) .
016 (0.
4) .
102 (2.
6) .
094 (2.
4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx.
0.
008 g Dimensions in inches and (millimeters) Marking A2 3 Top View 1 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist.
Load at Tamb = 25 °C and ≥ f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 3501) 150 –65 to +150 mA mW °C °C Device on fiberglass substrate, see layout 4/98 IMBD4148 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V, Tj = 150 °C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 10 mA VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air 1) Min.
– Typ.
– Max.
1 Unit V VF IR IR IR Ctot trr – – – – – – – – – – 2.
5 50 30 4 4 µA µA µA pF ns RthJA – – 4501) K/W Device on fiberglass substrate, see layout .
30 (7.
5) .
12 (3) .
04 (1) .
08 (2) .
04 (1) .
08 (2) .
59 (15) .
47 (12) .
03 (0.
8) 0.
2 (5) .
06 (1.
5) .
20 (5.
1) Dimensions in inches (millimeters) Layout for RthJA test Thicknes...


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