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S524A60X81

Samsung semiconductor
Part Number S524A60X81
Manufacturer Samsung semiconductor
Description 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
Published Apr 7, 2005
Detailed Description S524A40X11/40X21/ 40X41/60X81/60X51 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power Data Sheet OVERVIEW The S524A40X11/...
Datasheet PDF File S524A60X81 PDF File

S524A60X81
S524A60X81


Overview
S524A40X11/40X21/ 40X41/60X81/60X51 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power Data Sheet OVERVIEW The S524A40X11/40X21/40X41/60X81/60X51 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting the standard I2C™-bus serial interface.
It is fabricated using Samsung’s most advanced CMOS technology.
It has been developed for low power and low voltage applications (1.
8 V to 5.
5 V).
One of its major feature is a hardware-based write protection circuit for the entire memory area.
Hardware-based write protection is controlled by the state of the write-protect (WP) pin.
Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation.
Another significant feature of the S524A40X11/40X21/40X41/60X81/60X51 is its support for fast mode and standard mode.
FEATURES I2C-Bus Interface • • Two-wire serial interface Automatic word address increment • Operating Characteristics • Operating voltage — 1.
8 V to 5.
5 V Operating current — Maximum write current: < 3 mA at 5.
5 V — Maximum read current: < 200 µA at 5.
5 V — Maximum stand-by current: < 1 µA at 5.
5 V • Operating temperature range — – 25°C to + 70°C (commercial) — – 40°C to + 85°C (industrial) • Operating clock frequencies — 100 kHz at standard mode — 400 kHz at fast mode • Electrostatic discharge (ESD) — 5,000 V (HBM) — 500 V (MM) Packages • 8-pin DIP, SOP, and TSSOP EEPROM • • • • • • • 1K/2K/4K/8K/16K-bit (128/256/512/1,024/2,048-byte) storage area 16-byte page buffer Typical 3 ms write cycle time with auto-erase function Hardware-based write protection for the entire EEPROM (using the WP pin) EEPROM programming voltage generated on chip 1,000,000 erase/write cycles 100 years data retention 1-1 S524A40X11/40X21/40X41/60X81/60X51 SERIAL EEPROM DATA SHEET SDA Start/Stop Logic HV Generation Timing Control WP Control Logic SCL Slave Address Comparator Word Address Pointer Row decoder A0 A1 A2 EEPROM Cell Array 128 x 8 bits 256 x 8 bits 512 x 8 bits ...



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