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ISB35832

STMicroelectronics
Part Number ISB35832
Manufacturer STMicroelectronics
Description HCMOS STRUCTURED ARRAY
Published Apr 7, 2005
Detailed Description ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring ...
Datasheet PDF File ISB35832 PDF File

ISB35832
ISB35832

Overview
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.
5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.
3.
3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.
210 ns (typ) with fanout = 2.
Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS.
High drive I/O; capability of sinking up to 48 mA with slew rate control, current spike suppression and impedance matching.
Metallised generators to support SPRAM and DPRAM, plus an extensive embedded function library.
Combines Standard Cell Features with Sea of Gates time to market.
...


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