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JANSR2N7439

Part Number	JANSR2N7439
Manufacturer	Intersil Corporation
Description	Formerly Available As FSL923A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
Published	Apr 7, 2005
Detailed Description	JANSR2N7439 Data Sheet January 1999 File Number 4639 Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resista...
Datasheet	JANSR2N7439 PDF File

Overview

JANSR2N7439 Data Sheet January 1999 File Number 4639 Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power ﬁeld-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designe...

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