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JANTX2N6766

International Rectifier
Part Number JANTX2N6766
Manufacturer International Rectifier
Description POWER MOSFET N-CHANNEL
Published Apr 7, 2005
Detailed Description PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-20...
Datasheet PDF File JANTX2N6766 PDF File

JANTX2N6766
JANTX2N6766

Overview
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS IRF250 200V RDS(on) 0.
085Ω ID 30A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 30 19 A 120 150 W 1.
2 W/°C ±20 V 500 mJ 30 A 15 mJ 5.
0 V/ns -55 to 150 oC 300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5 (typical) g For footnotes refer to the last page www.
irf.
com 1 01/22/01 IRF250 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.
0mA ∆BVDSS/∆TJ Temperature Coefficient of B...


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