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K4S161622D

Part Number	K4S161622D
Manufacturer	Samsung semiconductor
Description	512K x 16Bit x 2 Banks Synchronous DRAM
Published	Apr 7, 2005
Detailed Description	K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed ...
Datasheet	K4S161622D PDF File

Overview

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.
3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -.
CAS Latency ( 2 & 3) -.
Burst Length (1, 2, 4, 8 & full page) -.
Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.
6us refresh duty cycle (2K/32ms) CMOS SDRAM GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design al...

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