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K4S281633D-N75

Samsung semiconductor
Part Number K4S281633D-N75
Manufacturer Samsung semiconductor
Description 8Mx16 SDRAM 54CSP
Published Apr 7, 2005
Detailed Description Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2...
Datasheet PDF File K4S281633D-N75 PDF File

K4S281633D-N75
K4S281633D-N75

Overview
Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.
0V/3.
0V & 3.
3V/3.
3V) Revision 0.
6 November 2001 Rev.
0.
6 Nov.
2001 Preliminary K4S281633D-RL(N) Revision History Revision 0.
0 (February 21.
2001, Target) CMOS SDRAM • First generation of 128Mb Low Power SDRAM without special function (V DD 3.
0V, V DDQ 3.
0V) Revision 0.
1 (June 4.
2001, Target) • Addition of DC Current value.
Revision 0.
2 (June 20.
2001, Target) • Changed device name from low power sdram to mobile dram.
Revision 0.
3 (August 1.
2001, Target) • Change of tSAC from 6ns to 6.
5ns in case of -1L part, from 7ns to 7.
5ns in case of -15 part.
• Change of tOH from 3ns to 3.
5ns.
• Change V IH min.
from 2.
0 V to 0.
8xVDDQ and VOH min.
from 2.
4V to 0.
9xVDDQ.
Revision 0.
4 (October 6.
2001, Preliminary) • Changed DC current.
• Changed of CL2 tSAC from 6ns to 7ns and CL3 tSAC from 6.
5ns to 7ns for -75 part.
• Changed of CL2 tSAC from 6.
5ns to 8ns and CL1 tSAC from 18ns to 20ns for -1L part.
• Changed of ...


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