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K4S51163PF-F90

Samsung semiconductor
Part Number K4S51163PF-F90
Manufacturer Samsung semiconductor
Description 8M x 16Bit x 4 Banks Mobile-SDRAM
Published Apr 7, 2005
Detailed Description K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed addres...
Datasheet PDF File K4S51163PF-F90 PDF File

K4S51163PF-F90
K4S51163PF-F90


Overview
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.
8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) • DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25...



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